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| HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr Preliminary data VDSS ID25 RDS(on) IXFK/IXFX 48N50Q 500 V 48 A 100 mW IXFK/IXFX 44N50Q 500 V 44 A 120 mW trr 250 ns PLUS 247TM (IXFX) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Test Conditions 0.4/6 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS TJ 150C, RG = 2 W TC = 25C 44N50 48N50 44N50 48N50 Maximum Ratings 500 500 20 30 44 48 176 192 48 60 2.5 5 500 -55 ... +150 150 -55 ... +150 300 V V V V A A A A A mJ J V/ns W C C C C Nm/lb.in. 6 10 g g G = Gate S = Source G (TAB) D TO-264 AA (IXFK) G D S (TAB) D = Drain TAB = Drain Features * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * International standard packages * Low RDS (on) * Rated for unclamped Inductive load switching (UIS) rated * Molding epoxies meet UL 94 V-0 flammability classification Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls Advantages * PLUS 247TM package for clip or spring mounting * Space savings * High power density 98612B (7/00) Symbol Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.0 V 4.0 V 100 nA 100 mA 2 mA 120 mW 100 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250uA VDS = VGS, ID = 4mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 TJ = 125C 44N50 48N50 IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-2 IXFK/IXFX 48N50Q IXFK/IXFX 44N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 30 45 6400 VGS = 0 V, VDS = 25 V, f = 1 MHz 930 220 33 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 22 75 10 190 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 40 86 0.26 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 PLUS247TM (IXFX) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 48 192 1.5 250 A A V ns mC A TO-264 AA (IXFK) Outline IF = IS,-di/dt = 100 A/ms, VR = 100 V 1.4 10 Note: 1. Pulse test, t 300 ms, duty cycle d 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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